Thin p-type gallium nitride and aluminum gallium nitride electron-blocking layer free gallium nitride-based light emitting diodes

US8227819B2 · kind B2 · utility

Assignee

• The Regents of the University of California · US

Inventors

• Hong Zhong · Temple City, US
• Anurag Tyagi · Kirkland, US
• James S. Speck · Fremont, US
• Steven P. DenBaars · Goleta, US
• Shuji Nakamura · Goleta, US

Key dates

• Filing date: Sep 30, 2011
• Grant date: Jul 24, 2012
• Expiry date: Sep 30, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/81

Abstract

A light emitting diode (LED) having a p-type layer having a thickness of 100 nm or less, an n-type layer, and an active layer, positioned between the p-type layer and the n-type layer, for emitting light, wherein the LED does not include a separate electron blocking layer.