Method and structure for creation of a metal insulator metal capacitor
US8227849B2 · kind B2 · utility
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12References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 17, 2010 |
| Grant date | Jul 24, 2012 |
| Priority date | — |
| Expiry date | Apr 16, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/692
Abstract
The invention is directed to an improved capacitor that reduces edge defects and prevents yield failures. A first embodiment of the invention comprises a protective layer adjacent an interface of a conductive layer with the insulator, while the second embodiment of the invention comprises a protective layer on an insulator which is on a conductive layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.