Semiconductor devices with stable and controlled avalanche characteristics and methods of fabricating the same

US8227855B2 · kind B2 · utility

Assignee

• FAIRCHILD SEMICONDUCTOR CORPORATION · US

Inventors

• Joseph A. Yedinak · Mountain Top, US
• Mark L. Rinehimer · Smethport, US
• Thomas E. Grebs · Smethport, US
• John L. Benjamin · Smethport, US

Key dates

• Filing date: Feb 9, 2009
• Grant date: Jul 24, 2012
• Expiry date: Jan 28, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/108

Abstract

Disclosed are semiconductor devices with breakdown voltages that are more controlled and stable after repeated exposure to breakdown conditions than prior art devices. The disclosed devices can be used to provide secondary circuit functions not previously contemplated by the prior art.