Light-sensitive component with increased blue sensitivity, method for the production thereof, and operating method

US8227882B2 · kind B2 · utility

Assignee

• austriamicrosystems AG

Inventors

• Hubert Enichlmair · Weinitzen, AT
• Jochen Kraft · Bruck an der Mur, AT
• Bernhard Löffler · Gleisdorf, AT
• Gerald Meinhardt · Graz, AT
• Georg Röhrer · Graz, AT
• Ewald Wachmann · Kainbach, AT

Key dates

• Filing date: Jan 31, 2006
• Grant date: Jul 24, 2012
• Expiry date: Dec 31, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F30/245

Abstract

A light-sensitive component which has a semiconductor junction between a thin relatively highly doped epitaxial layer and a relatively lightly doped semiconductor substrate. Outside a light incidence window, an insulating layer is arranged between epitaxial layer and semiconductor substrate. In this case, the thickness of the epitaxial layer is less than 50 nm, with the result that a large proportion of the light quanta incident in the light incidence window can be absorbed in the lightly doped semiconductor substrate.