Magnetic element with thermally assisted writing
US8228716B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 31, 2010 |
| Grant date | Jul 24, 2012 |
| Priority date | — |
| Expiry date | Sep 28, 2030 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/1675
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Magnetic element with thermally-assisted magnetic-field writing or thermally-assisted spin-transfer writing, comprising: a reference magnetic layer having a fixed direction magnetization; a storage magnetic layer exchange-pinned with an antiferromagnetic layer, wherein the magnetization direction of the storage layer can vary when said element can be heated to a temperature at least higher than a critical temperature of the antiferromagnetic layer; a tunnel barrier, provided between the reference layer and the storage layer; wherein the magnetic reference layer, and/or the magnetic storage layer includes at least one electrically-resistive thin layer for heating the magnetic element. The magnetic element disclosed herein has a voltage gain of typically 10 to 50% compared to conventional magnetic elements and shows a reduction of the stress induced during a writing operation as well as a reduction of the aging.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.