Heat treatment apparatus and method for heating substrate by irradiation thereof with light
US8229290B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Sep 12, 2008 |
| Grant date | Jul 24, 2012 |
| Priority date | — |
| Expiry date | May 25, 2031 |
Classification
- Technology area (CPC F)Mechanical Engineering; Lighting; Heating
- CPC primaryF27D5/0037
- WIPO fieldThermal processes and apparatus
- WIPO sectorMechanical engineering
Abstract
A semiconductor wafer preheated to a preheating temperature is irradiated with light from flash lamps. With the light emission from the flash lamps, a surface temperature of the semiconductor wafer is maintained at a recovery temperature during a period of 10 to 100 milliseconds to induce recovery of defects created in silicon crystals. Then, with subsequent flashing light emission from the flash lamps, the surface temperature of the semiconductor wafer will reach a processing temperature to induce activation of impurities. Increasing the surface temperature of the semiconductor wafer once to the recovery temperature and then, with the flashing light emission, to the processing temperature will also prevent cracking of the semiconductor wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.