Structure and method to make replacement metal gate and contact metal
US8232148B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 4, 2010 |
| Grant date | Jul 31, 2012 |
| Priority date | — |
| Expiry date | Sep 15, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/693
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An electrical device is provided with a p-type semiconductor device having a first gate structure that includes a gate dielectric on top of a semiconductor substrate, a p-type work function metal layer, a metal layer composed of titanium and aluminum, and a metal fill composed of aluminum. An n-type semiconductor device is also present on the semiconductor substrate that includes a second gate structure that includes a gate dielectric, a metal layer composed of titanium and aluminum, and a metal fill composed of aluminum. An interlevel dielectric is present over the semiconductor substrate. The interlevel dielectric includes interconnects to the source and drain regions of the p-type and n-type semiconductor devices. The interconnects are composed of a metal layer composed of titanium and aluminum, and a metal fill composed of aluminum. The present disclosure also provides a method of forming the aforementioned structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.