Method for fabricating semiconductor device
US8232154B2 · kind B2 · utility
6Cited by
3References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 21, 2009 |
| Grant date | Jul 31, 2012 |
| Priority date | — |
| Expiry date | Oct 15, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating a semiconductor device is provided. A high dielectric constant (high-k) layer and a work function metal layer are formed in sequence on a substrate. A hard mask layer is formed on the work function metal layer, where the material of the hard mask layer is lanthanum oxide. The work function metal layer is patterned by using the hard mask layer as a mask. The hard mask layer is then removed. Afterwards, a gate structure is formed on the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.