Substrate processing method
US8232207B2 · kind B2 · utility
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2References
12Claims
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Assignee
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Key dates
| Filing date | Dec 24, 2009 |
| Grant date | Jul 31, 2012 |
| Priority date | — |
| Expiry date | Nov 18, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3085
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a substrate processing method of processing a substrate that includes an oxide layer as a mask layer and a silicon layer as a target layer to be processed, the silicon layer is etched while depositing a deposit on a surface of the oxide layer by a plasma generated from a mixed gas of a fluorine-based gas, a bromine-based gas, O2 gas, and SiCl4 gas to secure a thickness of the mask layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.