Junction barrier Schottky diodes with current surge capability

US8232558B2 · kind B2 · utility

Assignee

• Cree, Inc. · US

Inventors

• Qingchun Zhang · Cary, US
• Sei-Hyung Ryu · Cary, US

Key dates

• Filing date: May 21, 2008
• Grant date: Jul 31, 2012
• Expiry date: Jun 8, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/64

Abstract

An electronic device includes a silicon carbide drift region having a first conductivity type, a Schottky contact on the drift region, and a plurality of junction barrier Schottky (JBS) regions at a surface of the drift region adjacent the Schottky contact. The JBS regions have a second conductivity type opposite the first conductivity type and have a first spacing between adjacent ones of the JBS regions. The device further includes a plurality of surge protection subregions having the second conductivity type. Each of the surge protection subregions has a second spacing between adjacent ones of the surge protection subregions that is less than the first spacing.