Interconnect structures, design structure and method of manufacture
US8232645B2 · kind B2 · utility
9Cited by
8References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 14, 2008 |
| Grant date | Jul 31, 2012 |
| Priority date | — |
| Expiry date | Aug 1, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An interconnect structure is provided that substantially eliminates electro-migration (EM) damage, a design structure and a method of manufacturing. The metal interconnect is formed in a dielectric material. A metal cap is selective to the metal interconnect. The metal cap includes RuX, where X is at Boron, Phosphorous or a combination of Boron and Phosphorous.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.