Patent · US Active

Monitoring method of exposure apparatus

US8233142B2 · kind B2 · utility

0Cited by

5References

16Claims

0Family size

Assignee

UNITED MICROELECTRONICS CORP. · TW

Inventors

Da Jiang · 安丰镇, CN
Ching-Shu Lo · Singapore, SG

Key dates

Filing date	Sep 29, 2009
Grant date	Jul 31, 2012
Priority date	—
Expiry date	Jan 5, 2031

Classification

Technology area (CPC G)Physics
CPC primaryG03F7/70625
WIPO fieldOptics
WIPO sectorInstruments

Abstract

In a monitoring method of an exposure apparatus, a top critical dimension (TCD) and a bottom critical dimension (BCD) of the test pattern formed on a photo-sensitive material layer are measured. A dose deviation (ΔE) and a focus deviation (ΔF) are calculated by following equations:TCD+BCD=αΔE+(TCD0+BCD0)TCD−BCD=β1ΔF+β2ΔF3 Here, α, β1 and β2 are constants, ΔE=E−E0, ΔF=F−F0, E represents a real exposure dose, F represents a real exposure focus, E0 represents a dose defined when a middle critical dimension of the test pattern is equal to a predetermined value, F0 represents a focus defined when TCD of the test pattern is equal to BCD thereof, and TCD0 and BCD0 are theoretical values in case of E0 and F0.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.