Patent · US Active

SRAM delay circuit that tracks bitcell characteristics

US8233337B2 · kind B2 · utility

13Cited by
8References
25Claims
0Family size

Assignee

Inventors

Key dates

Filing dateOct 19, 2009
Grant dateJul 31, 2012
Priority date
Expiry dateAug 18, 2030

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11C11/413
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

An SRAM delay circuit that tracks bitcell characteristics. A circuit is disclosed that includes an input node for receiving an input signal; a reference node for capturing a reference current from a plurality of reference cells; a capacitance network having a discharge that is controlled by the reference current; and an output circuit that outputs the input signal with a delay, wherein the delay is controlled by the discharge of the capacitance network.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.