Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element and methods of forming the same
US8236623B2 · kind B2 · utility
5Cited by
14References
61Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 31, 2007 |
| Grant date | Aug 7, 2012 |
| Priority date | — |
| Expiry date | Jul 27, 2030 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/79
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
In some aspects, a method of fabricating a memory cell is provided that includes (1) fabricating a steering element above a substrate; and (2) fabricating a reversible-resistance switching element coupled to the steering element by selectively fabricating carbon nano-tube (CNT) material above the substrate. Numerous other aspects are provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.