Patent · US Active

Method for producing a thyristor

US8236624B2 · kind B2 · utility

2Cited by

6References

10Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Harald Gossner · Riemerling, DE
Thomas Schulz · Austin, US
Christian Russ · Diedorf, DE
Gerhard Knoblinger · Villach, AT

Key dates

Filing date	Nov 18, 2009
Grant date	Aug 7, 2012
Priority date	—
Expiry date	Nov 18, 2029

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/0002
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

In a method for producing an electronic component, a first doped connection region and a second doped connection region are formed on or above a substrate; a body region is formed between the first doped connection region and the second doped connection region; at least two gate regions separate from one another are formed on or above the body region; at least one partial region of the body region is doped by means of introducing dopant atoms, wherein the dopant atoms are introduced into the at least one partial region of the body region through at least one intermediate region formed between the at least two separate gate regions.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.