Prevention and reduction of solvent and solution penetration into porous dielectrics using a thin barrier layer
US8236684B2 · kind B2 · utility
2Cited by
18References
10Claims
0Family size
Assignee
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Key dates
| Filing date | Jun 27, 2008 |
| Grant date | Aug 7, 2012 |
| Priority date | — |
| Expiry date | Jul 10, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0228
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method and apparatus for treating a substrate is provided. A porous dielectric layer is formed on the substrate. In some embodiments, the dielectric may be capped by a dense dielectric layer. The dielectric layers are patterned, and a dense dielectric layer deposited conformally over the substrate. The dense conformal dielectric layer seals the pores of the porous dielectric layer against contact with species that may infiltrate the pores. The portion of the dense conformal pore-sealing dielectric layer covering the field region and bottom portions of the pattern openings is removed by directional selective etch.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.