Method for patterning an ARC layer using SF6 and a hydrocarbon gas
US8236700B2 · kind B2 · utility
8Cited by
5References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 17, 2009 |
| Grant date | Aug 7, 2012 |
| Priority date | — |
| Expiry date | Nov 20, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31138
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of pattern etching a Si-containing anti-reflective coating (ARC) layer is described. The method comprises etching a feature pattern into the silicon-containing ARC layer using plasma formed from a process gas containing SF6 and a hydrocarbon gas. The method further comprises adjusting a flow rate of the hydrocarbon gas relative to a flow rate of the SF6 to reduce a CD bias between a final CD for nested structures in the feature pattern and a final CD for isolated structures in the feature pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.