Method and apparatus for identifying the chemical composition of a gas
US8237928B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 30, 2011 |
| Grant date | Aug 7, 2012 |
| Priority date | — |
| Expiry date | Mar 30, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N21/68
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Embodiments of the present invention relate to the analysis of the components of one or more gases, for example a gas mixture sampled from a semiconductor manufacturing process such as plasma etching or plasma enhanced chemical vapor deposition (PECVD). Particular embodiments provide sufficient power to a plasma of the sample, to dissociate a large number of the molecules and molecular fragments into individual atoms. With sufficient power (typically a power density of between 3-40 W/cm3) delivered into the plasma, most of the emission peaks result from emission of individual atoms, thereby creating spectra conducive to simplifying the identification of the chemical composition of the gases under investigation. Such accurate identification of components of the gas may allow for the precise determination of the stage of the process being performed, and in particular for detection of process endpoint.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.