Method of fabricating a deep trench (DT) metal-insulator-metal (MIM) capacitor

US8241981B1 · kind B1 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Rishikesh Krishnan · Poughkeepsie, US
• Joseph F. Shepard, Jr. · Hopewell Junction, US
• Michael P. Chudzik · Beacon, US
• Christian Lavoie · Ossining, US
• Dong-Ick Lee · Loudonville, US
• Oh-Jung Kwon · Hopewell Junction, US
• Unoh Kwon · Fishkill, US
• Youngjin Choi · San Jose, US

Key dates

• Filing date: Jan 31, 2011
• Grant date: Aug 14, 2012
• Expiry date: Jan 31, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B12/37

Abstract

A method includes providing an SOI substrate including a layer of silicon disposed atop a layer of an oxide, the layer of an oxide being disposed atop the semiconductor substrate; forming a deep trench having a sidewall extending through the layer of silicon and the layer of an oxide and into the substrate; depositing a continuous spacer on the sidewall to cover the layer of silicon, the layer of an oxide and a part of the substrate; depositing a first conformal layer of a conductive material throughout the inside of the deep trench; creating a silicide within the deep trench in regions extending through the sidewall into an uncovered part of the substrate; removing the first conformal layer from the continuous spacer; removing the continuous spacer; depositing a layer of a high k dielectric material throughout the inside of the deep trench, and depositing a second conformal layer of a conductive material onto the layer of a high-k dielectric material.