Film forming method and film forming apparatus
US8242015B2 · kind B2 · utility
17Cited by
4References
19Claims
0Family size
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Key dates
| Filing date | Dec 4, 2009 |
| Grant date | Aug 14, 2012 |
| Priority date | — |
| Expiry date | Jan 19, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/09701
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
On a surface of an object to be treated, a Mn-containing thin film or CuMn-containing alloy thin film is formed by heat treatment (CVD or ALD) by using a Mn-containing source gas (or Mn-containing source gas and a Cu-containing gas) and an oxygen-containing gas (for instance, water vapor) as a processing gas. The Mn-containing thin film or the CuMn-containing alloy thin film can be formed with high step coverage in a fine recess formed on the surface of the object to be treated.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.