High quality silicon oxide films by remote plasma CVD from disilane precursors

US8242031B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Abhijit Basu Mallick · Palo Alto, US
• Srinivas D. Nemani · Sunnyvale, US
• Ellie Yieh · San Jose, US

Key dates

• Filing date: Sep 27, 2010
• Grant date: Aug 14, 2012
• Expiry date: Sep 27, 2030

Classification

• Technology area (CPC C): Chemistry; Metallurgy
• CPC primary: C23C16/452
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

A method of depositing a silicon and nitrogen containing film on a substrate. The method includes introducing silicon-containing precursor to a deposition chamber that contains the substrate, wherein the silicon-containing precursor comprises at least two silicon atoms. The method further includes generating at least one radical nitrogen precursor with a remote plasma system located outside the deposition chamber. Moreover, the method includes introducing the radical nitrogen precursor to the deposition chamber, wherein the radical nitrogen and silicon-containing precursors react and deposit the silicon and nitrogen containing film on the substrate. Furthermore, the method includes annealing the silicon and nitrogen containing film in a steam environment to form a silicon oxide film, wherein the steam environment includes water and acidic vapor.