Monosilane or disilane derivatives and method for low temperature deposition of silicon-containing films using the same
US8242032B2 · kind B2 · utility
5Cited by
22References
8Claims
0Family size
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Inventors
Key dates
| Filing date | Jan 4, 2011 |
| Grant date | Aug 14, 2012 |
| Priority date | — |
| Expiry date | Jan 4, 2031 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC07F7/10
- WIPO fieldOrganic fine chemistry
- WIPO sectorChemistry
Abstract
This invention relates to silicon precursor compositions for forming silicon-containing films by low temperature (e.g., <550° C.) chemical vapor deposition processes for fabrication of ULSI devices and device structures. Such silicon precursor compositions comprise at least a silane or disilane derivative that is substituted with at least one alkylhydrazine functional groups and is free of halogen substitutes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.