Patent · US Active

Optical device structure using non-polar GaN substrates and growth structures for laser applications in 481 nm

US8242522B1 · kind B1 · utility

187Cited by
40References
1Claims
0Family size

Assignee

Inventor

Key dates

Filing dateMay 12, 2010
Grant dateAug 14, 2012
Priority date—
Expiry dateAug 19, 2030

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01S5/3211
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

An optical device. The optical device comprises a GaN substrate having a non-polar surface region, an n-type GaN cladding layer, an n-type SCH layer comprised of InGaN, a multiple quantum-well active region comprised of five InGaN quantum well layers separated by four InGaN barrier layers, a p-type guide layer comprised of GaN, an electron blocking layer comprised of AlGaN, a p-type GaN cladding layer, and a p-type GaN contact layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.