Method of magnetron sputtering and a method for determining a power modulation compensation function for a power supply applied to a magnetron sputtering source
US8246794B2 · kind B2 · utility
1Cited by
7References
12Claims
0Family size
Assignee
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Key dates
| Filing date | Dec 4, 2008 |
| Grant date | Aug 21, 2012 |
| Priority date | — |
| Expiry date | Jan 27, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3455
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method of magnetron sputtering, comprises rotating a magnet of a magnetron with an angular frequency ω, and, during sputtering of material from a source of the magnetron onto a substrate, periodically modulating a power level applied to the source with at least a component comprising a frequency f which is a harmonic of the angular frequency ω of rotation of the magnet other than the first harmonic.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.