Substrate and manufacturing method therefor
US8247301B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 26, 2008 |
| Grant date | Aug 21, 2012 |
| Priority date | — |
| Expiry date | Apr 7, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A substrate having, on a base material, a barrier film for preventing copper diffusion containing one or more metal elements selected from tungsten, molybdenum and niobium, a metal element having a catalytic function in electroless plating such as ruthenium, rhodium, and iridium, and nitrogen contained in the form of a nitride of the aforementioned one or more metal elements selected from tungsten, molybdenum and niobium. The barrier film for preventing copper diffusion is manufactured by sputtering in a nitrogen atmosphere using a target containing one or more metal elements selected from tungsten, molybdenum and niobium and the aforementioned metal element having a catalytic function in electroless plating.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.