Method of manufacturing semiconductor device, semiconductor device, electronic instrument, semiconductor manufacturing apparatus, and storage medium
US8247321B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jan 20, 2009 |
| Grant date | Aug 21, 2012 |
| Priority date | — |
| Expiry date | Apr 20, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76844
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
When a barrier film is formed on an exposed surface of an interlayer insulation film on a substrate, the interlayer insulation film having a recess formed therein, and a metal wiring to be electrically connected to a metal wiring in a lower layer is formed in the recess, a barrier film having an excellent step coverage can be formed and increase of a wiring resistance can be restrained. An oxide film on a surface of the lower copper wiring exposed to a bottom surface of the interlayer insulation film is reduced or edged so as to remove oxygen on the surface of the copper wiring. Then, by supplying an organic metal compound containing manganese and containing no oxygen, generation of manganese oxide as a self-forming barrier film is selectively allowed on an area containing oxygen, such as a sidewall of the recess and a surface of the interlayer insulation film, while generation of the manganese oxide is not allowed on the surface of the copper wiring. Thereafter, copper is embedded in the recess.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.