Semiconductor device and method of making same

US8247861B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Georg Tempel · Zorneding, DE
• Ernst-Otto Andersen · Radebeul, DE
• Achim Gratz · Dresden, DE

Key dates

• Filing date: Jul 18, 2007
• Grant date: Aug 21, 2012
• Expiry date: Apr 12, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/0002
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A semiconductor device and method of making a semiconductor device are disclosed. A semiconductor body, a floating gate poly and a source/drain region are provided. A metal interconnect region with a control gate node is provided that capacitively couples to the floating gate poly.