Method and surface morphology of non-polar gallium nitride containing substrates
US8247887B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 2, 2009 |
| Grant date | Aug 21, 2012 |
| Priority date | — |
| Expiry date | Aug 15, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An optical device, e.g., LED, laser. The device includes a non-polar gallium nitride substrate member having a slightly off-axis non-polar oriented crystalline surface plane. In a specific embodiment, the slightly off-axis non-polar oriented crystalline surface plane is up to about −0.6 degrees in a c-plane direction, but can be others. In a specific embodiment, the present invention provides a gallium nitride containing epitaxial layer formed overlying the slightly off-axis non-polar oriented crystalline surface plane. In a specific embodiment, the device includes a surface region overlying the gallium nitride epitaxial layer that is substantially free of hillocks.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.