Plasma processing apparatus of substrate and plasma processing method thereof
US8252193B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 20, 2008 |
| Grant date | Aug 28, 2012 |
| Priority date | — |
| Expiry date | Apr 14, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32165
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A substrate plasma processing apparatus includes a chamber of which an interior is evacuated under a predetermined vacuum condition; an RF electrode which is disposed in the chamber and configured so as to hold a substrate to be processed on a main surface thereof; an opposing electrode which is disposed opposite to the RF electrode in the chamber; an RF voltage applying device for applying an RF voltage with a predetermined frequency to the RF electrode; and a pulsed voltage applying device for applying a pulsed voltage to the RF electrode so as to be superimposed with the RF voltage and which includes a controller for controlling a timing in application of the pulsed voltage and defining a pause period of the pulsed voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.