Amorphous film of composite oxide, crystalline film of composite oxide, method of producing said films and sintered compact of composite oxide
US8252206B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 13, 2008 |
| Grant date | Aug 28, 2012 |
| Priority date | — |
| Expiry date | Jun 29, 2029 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC04B2235/77
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
Provided is an amorphous film comprised substantially of indium, tin, magnesium and oxygen, and containing tin at a ratio of 5 to 15% based on an atomicity ratio of Sn/(In+Sn+Mg) and magnesium at a ratio of 0.1 to 2.0% based on an atomicity ratio of Mg/(In+Sn+Mg) with remnant being indium and oxygen, and having a film resistivity of 0.4 mΩcm or less as a result of crystallizing the film by annealing the film at a temperature of 260° C. or lower. An amorphous ITO thin film for use as a display electrode and the like in flat panel displays is obtained by way of sputter deposition without heating the substrate and without the need of adding water during the deposition. This amorphous ITO film has the property of being crystallized by annealing at 260° C. or lower, which is not such a high temperature, and having low resistivity after crystallization. Also provided are a method of producing the film and a sintered compact for producing the film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.