Method of manufacturing nanowires parallel to the supporting substrate
US8252636B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 7, 2008 |
| Grant date | Aug 28, 2012 |
| Priority date | — |
| Expiry date | Nov 7, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6757
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A method of manufacturing at least one nanowire, the nanowire being parallel to its supporting substrate, the method including the formation on the supporting substrate of a structure comprising a bar and two regions, a first end of the bar being secured to one of the two regions and a second end of the bar being secured to the other region, the width of the bar being less than the width of the regions, the subjection of the bar to an annealing under gaseous atmosphere in order to transform the bar into a nanowire, the annealing being carried out under conditions allowing control of the sizing of the neck produced during the formation of the nanowire.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.