Patent · US Active

Method for forming under a thin layer of a first material portions of another material and/or empty areas

US8252638B2 · kind B2 · utility

0Cited by

16References

6Claims

0Family size

Assignee

STMicroelectronics SA

Inventors

Philippe Coronel · Barraux, FR
Yves Thomas Laplanche · Valbonne, FR
Laurent Pain · Voiron, FR

Key dates

Filing date	Feb 28, 2007
Grant date	Aug 28, 2012
Priority date	—
Expiry date	Feb 18, 2029

Classification

Technology area (CPC H)Electricity
CPC primaryH10D30/6744
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method for forming an empty area under a layer of a given material, including forming on a substrate a stacking of a photosensitive layer and of a layer of the given material; insolating a portion of the photosensitive layer or its complement according to whether the photosensitive layer is positive or negative with an electron beam crossing the layer of the given material; and removing the portion of the photosensitive layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.