In situ Cu seed layer formation for improving sidewall coverage
US8252690B2 · kind B2 · utility
3Cited by
9References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 14, 2008 |
| Grant date | Aug 28, 2012 |
| Priority date | — |
| Expiry date | Jun 30, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76849
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a seed layer of an interconnect structure includes forming a dielectric layer; forming an opening in the dielectric layer; performing a first deposition step to form the seed layer; and in-situ performing a first etch step to remove a portion of the seed layer. The method may further includes additional deposition and etch steps for forming the seed layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.