Optical device structure using GaN substrates and growth structures for laser applications
US8254425B1 · kind B1 · utility
187Cited by
40References
18Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Apr 16, 2010 |
| Grant date | Aug 28, 2012 |
| Priority date | — |
| Expiry date | May 21, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2304/04
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An optical device having a structured active region configured for selected wavelengths of light emissions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.