Method and system for monitoring an etch process
US8257546B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 29, 2003 |
| Grant date | Sep 4, 2012 |
| Priority date | — |
| Expiry date | Sep 18, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method and apparatus for monitoring an etch process. The etch process may be monitored using measurement information (e.g., critical dimensions (CD), layer thickness, and the like) provided ex-situ with respect to the etch process in combination with in-situ monitoring (e.g., spectroscopy, interferometry, scatterometry, reflectometry, and the like) performed during the etch process. The ex-situ measurement information in combination with the in-situ monitoring may be used to monitor for example, an endpoint of an etch process, an etch depth profile of a feature formed on a substrate, fault detection of an integrated circuit manufacturing process, and the like.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.