Copper-filled trench contact for transistor performance improvement
US8258057B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 23, 2006 |
| Grant date | Sep 4, 2012 |
| Priority date | — |
| Expiry date | Mar 1, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of fabricating a first contact to a semiconductor device, which fundamentally comprises providing a semiconductor device formed on a substrate. The substrate further includes a conductive surface. A dielectric layer is formed over the substrate and has an opening exposing the conductive surface. The opening extends an entire length of the semiconductor device, partway down the entire length of the device, extending from the device onto adjacent field of the device, or and a combination thereof. A barrier layer is formed within the opening. A copper containing material fills the opening to form a first contact to the semiconductor device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.