Using a bit specific reference level to read a memory
US8259525B2 · kind B2 · utility
5Cited by
1References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 19, 2012 |
| Grant date | Sep 4, 2012 |
| Priority date | — |
| Expiry date | Jan 19, 2032 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2013/0054
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A voltage derived from accessing a selected bit using one read current may be utilized to read a selected bit of an untriggered phase change memory after the read current is changed. As a result, different reference voltages may be used to sense the state of more resistive versus a less resistive selected cells. The resulting read window or margin may be improved in some embodiments.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.