Integrated total internal reflectors for high-gain laser diodes with high quality cleaved facets on nonpolar/semipolar GaN substrates
US8259769B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 13, 2009 |
| Grant date | Sep 4, 2012 |
| Priority date | — |
| Expiry date | Jul 13, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2304/04
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A laser diode device operable at a one or more wavelength ranges. The device has a first waveguide provided on a non-polar or semipolar crystal plane of gallium containing material. In a specific embodiment, the first waveguide has a first gain characteristic and a first direction. In a specific embodiment, the first waveguide has a first end and a second end and a first length defined between the first end and the second end. The device has a second waveguide provided on a non-polar or semipolar crystal plane of gallium containing material. In a specific embodiment, the second waveguide has a second gain characteristic and a second direction. In a specific embodiment, the second waveguide has a first end, a second end, and a second length defined between the first end and the second end. In a specific embodiment, the second waveguide has the first end being coupled to the first end of the first waveguide. The second length is in a different direction from the second length. In a specific embodiment, the device has a cleaved region provided on the second end of the second waveguide, the cleaved region being perpendicular to the second direction of the second waveguide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.