Vacuum processing method
US8262801B2 · kind B2 · utility
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4Claims
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Key dates
| Filing date | Aug 11, 2010 |
| Grant date | Sep 11, 2012 |
| Priority date | — |
| Expiry date | Feb 24, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/6831
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A vacuum processing method using an apparatus including a processing chamber disposed in a vacuum reactor and having plasma formed thereon, a sample stage having a sample placed on the upper plane thereof, and a gas introducing mechanism, wherein the sample stage includes a gas supply port for introducing thermal conductance gas between the sample stage and the sample to be processed. The method includes placing a dummy sample on the sample stage, introducing dust removal gas between the sample stage and the dummy sample, and removing particles attached to the sample stage via the flow of dust removal gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.