Method of forming variable resistance memory device
US8263455B2 · kind B2 · utility
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21Claims
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Key dates
| Filing date | Nov 24, 2010 |
| Grant date | Sep 11, 2012 |
| Priority date | — |
| Expiry date | Nov 24, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8828
Abstract
Provided are a method of forming an electrode of a variable resistance memory device and a variable resistance semiconductor memory device using the method. The method includes: forming a heat electrode; forming a variable resistance material layer on the heat electrode; and forming a top electrode on the variable resistance material layer, wherein the heat electrode includes a nitride of a metal whose atomic radius is greater than that of titanium (Ti) and is formed through a thermal chemical vapor deposition (CVD) method without using plasma.
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