Patent · US Active

Process for making a GaN substrate

US8263984B2 · kind B2 · utility

1Cited by
2References
20Claims
0Family size

Assignee

Inventor

Key dates

Filing dateNov 11, 2007
Grant dateSep 11, 2012
Priority date—
Expiry dateFeb 22, 2029

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L21/02634
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

In some embodiments, the invention relates to a process for making a GaN substrate comprising: transferring a first monocrystal GaN layer onto a supporting substrate; applying crystal growth for a second monocrystal GaN layer on the first layer; the first and second GaN layers thereby forming together the GaN substrate, the GaN substrate having a thickness of at least 10 micrometers, and removing at least one portion of the supporting substrate.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.