Nonvolatile semiconductor memory device and method for manufacturing same
US8264031B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 29, 2010 |
| Grant date | Sep 11, 2012 |
| Priority date | — |
| Expiry date | Aug 6, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B41/27
Abstract
A nonvolatile semiconductor memory device includes: a semiconductor substrate; a multilayer structure; a semiconductor pillar; a third insulating film; and a fourth insulating film layer. The a multilayer structure is provided on the semiconductor substrate and including a plurality of constituent multilayer bodies stacked in a first direction perpendicular to a major surface of the semiconductor substrate. Each of the plurality of constituent multilayer bodies includes an electrode film provided parallel to the major surface, a first insulating film, a charge storage layer provided between the electrode film and the first insulating film, and a second insulating film provided between the charge storage layer and the electrode film. The semiconductor pillar penetrates through the multilayer structure in the first direction. The third insulating film is provided between the semiconductor pillar and the electrode film. The fourth insulating film is provided between the semiconductor pillar and the charge storage layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.