Semiconductor device having a floating semiconductor zone

US8264033B2 · kind B2 · utility

Assignee

• Infineon Technologies Austria AG · AT

Inventors

• Frank Pfirsch · Birkenfeld, DE
• Maria Cotorogea · Taufkirchen, DE
• Franz Hirler · Isen, DE
• Franz-Josef Niedernostheide · Hagen am Teutoburger Wald, DE
• Thomas Raker · Ottobrunn, DE
• Hans-Joachim Schulze · Taufkirchen, DE
• Hans Peter Felsl · Munich, DE

Key dates

• Filing date: Jul 21, 2009
• Grant date: Sep 11, 2012
• Expiry date: Oct 7, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/117

Abstract

A semiconductor device includes a first trench and a second trench extending into a semiconductor body from a surface. A body region of a first conductivity type adjoins a first sidewall of the first trench and a first sidewall of the second trench, the body region including a channel portion adjoining to a source structure and being configured to be controlled in its conductivity by a gate structure. The channel portion is formed at the first sidewall of the second trench and is not formed at the first sidewall of the first trench. An electrically floating semiconductor zone of the first conductivity type adjoins the first trench and has a bottom side located deeper within the semiconductor body than the bottom side of the body region.