High-voltage LDMOSFET and applications therefor in standard CMOS
US8264039B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 28, 2004 |
| Grant date | Sep 11, 2012 |
| Priority date | — |
| Expiry date | Jun 24, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/516
Abstract
A high-voltage LDMOSFET includes a semiconductor substrate, in which a gate well is formed. A source well and a drain well are formed on either side of the gate well, and include insulating regions within them that do not reach the full depth. An insulating layer is disposed on the substrate, covering the gate well and a portion of the source well and the drain well. A conductive gate is disposed on the insulating layer. Biasing wells are formed adjacent the source well and the drain well. A deep well is formed in the substrate such that it communicates with the biasing wells and the gate well, while extending under the source well and the drain well, such as to avoid them. Biasing contacts at the top of the biasing wells bias the deep well, and therefore also the gate well.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.