Multi-gate device having a T-shaped gate structure
US8264048B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 15, 2008 |
| Grant date | Sep 11, 2012 |
| Priority date | — |
| Expiry date | Dec 5, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/017
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A multi-gate device having a T-shaped gate structure is generally described. In one example, an apparatus includes a semiconductor substrate, at least one multi-gate fin coupled with the semiconductor substrate, the multi-gate fin having a gate region, a source region, and a drain region, the gate region being positioned between the source and drain regions, a gate dielectric coupled to the gate region of the multi-gate fin, a gate electrode coupled to the gate dielectric, the gate electrode having a first thickness and a second thickness, the second thickness being greater than the first thickness, a first spacer dielectric coupled to a portion of the gate electrode having the first thickness, and a second spacer dielectric coupled to the first spacer dielectric and coupled to the gate electrode where the second spacer dielectric is coupled to a portion of the gate electrode having the second thickness.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.