Patent · US Active

Method of sealing an air gap in a layer of a semiconductor structure and semiconductor structure

US8264060B2 · kind B2 · utility

7Cited by

10References

20Claims

0Family size

Assignee

Freeescale Semiconductor, Inc. · US

Inventors

Greg Braeckelmann · Grenoble, FR
Marius Orlowski · Meylan, FR
Andreas Wild · Weimar, DE

Key dates

Filing date	Nov 21, 2011
Grant date	Sep 11, 2012
Priority date	—
Expiry date	Nov 21, 2031

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/76834
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Providing a first layer of a semiconductor structure having at least one air gap between conductive lines formed in the first layer. The air gap extends into the first layer from a first surface of the first layer. A barrier dielectric material over the first surface and the air gap is selected to have a dielectric constant less than 3.5 and to provide a barrier to prevent chemicals entering the at least one air gap. An air gap can extend from a first surface of the first layer to at least a portion of side surfaces of the at least two conductive lines to expose at least a portion of the side surfaces.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.