Liner formation in 3DIC structures
US8264066B2 · kind B2 · utility
12Cited by
34References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 13, 2009 |
| Grant date | Sep 11, 2012 |
| Priority date | — |
| Expiry date | Aug 21, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/19043
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An integrated circuit structure includes a semiconductor substrate; a through-semiconductor via (TSV) opening extending into the semiconductor substrate; and a TSV liner in the TSV opening. The TSV liner includes a sidewall portion on a sidewall of the TSV opening and a bottom portion at a bottom of the TSV opening. The bottom portion of the TSV liner has a bottom height greater than a middle thickness of the sidewall portion of the TSV liner.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.