Resist composition and patterning process
US8268528B2 · kind B2 · utility
13Cited by
8References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 1, 2009 |
| Grant date | Sep 18, 2012 |
| Priority date | — |
| Expiry date | Jul 8, 2030 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/2041
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A resist composition is provided comprising (A) an additive polymer of acyl-protected hexafluoroalcohol structure, (B) a base polymer having a structure derived from lactone ring, hydroxyl group and/or maleic anhydride, the base polymer becoming soluble in alkaline developer under the action of acid, (C) a photoacid generator, and (D) an organic solvent. The additive polymer is transparent to radiation of wavelength up to 200 nm, and its properties can be tailored by a choice of the polymer structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.