Methods of manufacturing a semiconductor device; method of manufacturing a memory cell; semiconductor device; semiconductor processing device; integrated circuit having a memory cell
US8268664B2 · kind B2 · utility
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6References
44Claims
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Key dates
| Filing date | Mar 5, 2007 |
| Grant date | Sep 18, 2012 |
| Priority date | — |
| Expiry date | Dec 10, 2028 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/12528
Abstract
Methods of manufacturing a semiconductor device, a method of manufacturing a memory cell, a semiconductor device, a semiconductor processing device, and a memory cell, are provided. In one embodiment a method of manufacturing a semiconductor device is provided including forming a metal doped chalcogenide layer using light irradiation at least partially during provision of the metal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.