Patent · US Active

Semiconductor device comprising eFUSES of enhanced programming efficiency

US8268679B2 · kind B2 · utility

3Cited by
4References
13Claims
0Family size

Assignee

Inventors

Key dates

Filing dateOct 15, 2009
Grant dateSep 18, 2012
Priority date
Expiry dateAug 8, 2030

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10T29/49107
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

In sophisticated integrated circuits, an electronic fuse may be formed such that an increased sensitivity to electromigration may be accomplished by including at least one region of increased current density. This may be accomplished by forming a corresponding fuse region as a non-linear configuration, wherein at corresponding connection portions of linear segments, the desired enhanced current crowding may occur during the application of the programming voltage. Hence, increased reliability and more space-efficient layout of the electronic fuses may be accomplished.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.